superfast recovery rectifiers voltage - 50 to 8 00 volts current - 1.0 ampere features ? superfast recovery times-epitaxial construction ? low forward voltage, high current capability ? exceeds environmental standards of mil-s-19500/228 ? hermetically sealed ? low leakage ? high surge capability ? plastic package has underwriters laboratories flammability classification 94v-o utilizing flame retardant epoxy molding compound high temperature soldering : 260 ? o c / 10 seconds at terminals pb free product at available : 99% sn above meet rohs ? environment substance directive request mechanical data ? case: molded plastic, do-41 ? terminals: axial leads, solderable to mil-std-202, method 208 ? polarity: color band denotes cathode end ? mounting position: any ? weight: 0.012 ounce, 0.3 gram maximum ratings and electrical characteristics ratings at 25 j ambient temperature unless otherwise specified. resistive or inductive load, 60hz. sf11g sf12g SF13G sf14g sf15g sf16g sf17g sf18g units maximum recurrent peak reverse voltage 50 100 150 200 300 400 600 800 v maximum rms voltage 35 70 105 140 210 320 420 640 maximum dc blocking voltage maximum average forward current .375"(9.5mm) lead length at ta=55 j 1.0 a peak forward surge current, ifm (surge): 8.3ms single half sine-wave superimposed on rated load(jedec method) 30.0 a maximum forward voltage at 1.0a dc 0.95 1.25 1.7 v maximum dc reverse current at rated dc blocking voltage 5.0 ua maximum dc reverse current at rated dc blocking voltage ta=125 150 ua maximum reverse recovery time(note 1) 35.0 ns typical junction capacitance (note 2) 17 pf typical junction resistance(note 3) 50 /w operating and storage temperature range tj -55to +150 notes: 1. reverse recovery test conditions: if=.5a, ir=1a, irr=.25a 2. measured at 1 mhz and applied reverse voltage of 4.0 vdc 3. thermal resistance from junction to ambient and from junction to lead length 0.375?(9.5mm) p.c.b. mounted .034 (.86) .028 (.71) .205 (5.2) .160 (4.1) .107 (2.7) .080 (2.0) dia. dia. do-41 unit:inch(mm) 1.0 (25.4) min. 1.0 (25.4) min. r ja symbols vrrm vrms vdc i(av) ifsm vf ir trr cj tj,tstg ir data sheet sf11g~sf18 g semiconductor http://www.yeashin.com 1 rev.02 20110725 c c c c c 50 100 150 200 300 400 600 800 v v
r atings and characteristic curves sf11g~sf18g h ttp://www.yeashin.com 2 rev.02 20110725 r ating a nd cha ra cteristic curves f ig.2 ma ximum avera ge forwa rd current derating l ead temperature, c o d eificerdrawrofegareva serepmatnerruc 0 0 0 .5 1.0 1.5 20 40 60 80 100 120 140 160 180 s ingle phase, half-wave, 60hz resistive or inductive load p.c.b mounted on 0.3 x 0.3" (8.0 x 8.0 mm)copper pad areas f ig.1 typica l j unction ca pa cita nce r everse voltage, volts f p,ecnaticapac f ig.4 typica l forwa rd cha ra cteristics i nstantaneous forward voltage volts t sni ,tnerrucdrawrofsuoenatna serepma f ig.3 typica l reverse cha ra cteristics n umber of cycles at 60hz k pserepma,tnerrucegrusdrawrof )evawgnis-flah( f ig.5 ma ximum non-repeitive surge current 4 0 60 80 100 1 2 4 6 8 10 20 5 20 15 10 30 25 35 0 1 .0 2.0 3.0 4.0 0 .1 1.0 10 3 00-400v 50-200v 600-800v t =25 c a o 1 00 10 0.1 1 10 100 1 t = 25 c f = 1.0mhz vsig = 50mvp-p j o 0 .5 1.5 2.5 3.5 p ercent of rated peak inverse voltge, volts , tnerrucesreversuoenatnatsvni serepmaorcim 1 000 1 00 1 0 1.0 0.1 20 40 60 80 100 120 t = 75 c j o t = 25 c j o t = 125 c j o
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